Analysis of SiGe FET device structures on silicon-on-sapphire substrates by x-ray diffraction

被引：2

作者：

Mooney, PM ^{[1
]}

Chu, JO ^{[1
]}

Ott, JA ^{[1
]}

Jordan-Sweet, JL ^{[1
]}

Dubbelday, WB ^{[1
]}

Kavanagh, KL ^{[1
]}

Lagnado, I ^{[1
]}

Meyerson, BS ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES | 1998年 / 533卷

关键词：

D O I：

10.1557/PROC-533-55

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si/Si1-xGex heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-diffusion of Ge from the Si1-xGex quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 degrees C.

引用

页码：55 / 60

页数：6

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