Low-Temperature Synthesis of Electrically-Conductive Pigment Zinc Oxide Doped with Gallium Donor

A method for the synthesis of electrically conductive pigment zinc oxide doped with a donor addition of gallium at a temperature of no more than 250 degrees C is presented. Samples of electrically conductive pigment zinc oxide have been prepared and studied, the processes proceeding during its synthesis have been examined, and the dependence of the specific volumetric electrical resistance of pigment zinc oxide on the processing temperature has been studied. The optimal concentration of the dopant donor addition was 0.4 wt % Ga3+ and it was determined by atomic emission and mass spectroscopy. It was shown that the donor addition of gallium increases the specific volumetric electrical conductivity of pigment zinc oxide by 10(5) times.