Dynamic control and measurement of thin film growth on a rotating wafer by reflectance analysis of inclined incident laser beam

被引：1

作者：

Sato, N ^{[1
]}

Singh, BP ^{[1
]}

Narazaki, W ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] ADVANTEST Labs, Aoba Ku, Sendai, Miyagi 9893124, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

thin film growth; molecular beam epitaxy; reflectance analysis; inclined laser beam; rotating n-GaAs wafer; in-situ growth control;

D O I：

10.1016/S0169-4332(98)00163-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Accurate in-situ molecular beam epitaxial growth of vertical cavity surface emitting lasers on a rotating GaAs wafer is demonstrated using inclined incident He-Ne laser reflectometry. A sinusoidal intensity variation signal is observed in the reflected light when it is monitored at a fixed position on a rotating wafer. This modulated signal is found important to give the information about the growth rate from as short as half a period of these oscillations. High precision in measurement is confirmed with reproducibility of the thickness results and its control for high accuracy is proposed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：841 / 844

页数：4

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