Complex electrical permittivity of the monolayer molybdenum disulfide (MoS2) in near UV and visible

被引：105
|
作者：
Mukherjee, Bablu [1 ]
Tseng, Frank [2 ]
Gunlycke, Daniel [2 ]
Amara, Kiran Kumar [3 ]
Eda, Goki [3 ]
Simsek, Ergun [1 ]
机构：
[1] George Washington Univ, Washington, DC 20052 USA
[2] Naval Res Lab, Washington, DC 20375 USA
[3] Natl Univ Singapore, Singapore 117548, Singapore
来源：
OPTICAL MATERIALS EXPRESS | 2015年 / 5卷 / 02期
关键词：
PHOTOLUMINESCENCE; LAYERS;
D O I：
10.1364/OME.5.000447
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Temperature and Fermi energy dependent exciton eigenenergies of monolayer molybdenum disulfide (MoS2) are calculated using an atomistic model. These exciton eigen-energies are used as the resonance frequencies of a hybrid Lorentz-Drude-Gaussian model, in which oscillation strengths and damping coefficients are obtained from the experimental results for the differential transmission and reflection spectra of monolayer MoS2 coated quartz and silicon substrates, respectively. Numerical results compared to experimental results found in the literature reveal that the developed permittivity model can successfully represent the monolayer MoS2 under different biasing conditions at different temperatures for the design and simulation of MoS2 based opto-electronic devices. (C) 2015 Optical Society of America
引用
收藏
页码：447 / 455
页数：9
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