Enhanced Electric-field-induced Strain at the Ferroelectric-electrostrcitive Phase Boundary of Yttrium-doped Bi0.5(Na0.82K0.18)0.5TiO3 Lead-free Piezoelectric Ceramics
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作者:
Binh, Do Nam
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Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Binh, Do Nam
[1
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Hussain, Ali
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Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Hussain, Ali
[1
]
Lee, Hee-Dong
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Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Lee, Hee-Dong
[1
]
Kim, Ill-Whan
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Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Kim, Ill-Whan
[1
]
Lee, Jae-Shin
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Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Lee, Jae-Shin
[1
]
Kim, Ill-Won
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Univ Ulsan, Dept Phys, Ulsan 680749, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Kim, Ill-Won
[2
]
Tai, Weon Pil
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Ulsan Techno Pk, Ulsan Fine Chem Ind Ctr, Ulsan 681802, South KoreaUniv Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
Tai, Weon Pil
[3
]
机构:
[1] Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South Korea
[2] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[3] Ulsan Techno Pk, Ulsan Fine Chem Ind Ctr, Ulsan 681802, South Korea
The effects of Y doping on the crystal structure, and on the ferroelectric and the piezoelectric properties of Bi-0.5(Na0.82K0.18)(0.5)TiO3 ceramics have been investigated. The Y doping induced a transition from a ferroelectric (FE) tetragonal to an electrostrcitive (ES) pseudocubic phase, leading to the degradations of the dielectric constant, loss tangent, the remnant polarization, coercive field, and piezoelectric coefficient d(33). However, the electric-field-induced strain was significantly enhanced by the Y-doping-induced phase transition and reached the highest value of S-max/E-max = 278 pm/V when 0.7 wt% Y2O3 was doped. The abnormal enhancement in strain was attributed to the coexistence of FE and ES phases, which provided more degrees of freedom for domain reorientation under electric fields.
机构:
Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Gyeongnam 641773, South Korea
GIK Inst Engn Sci & Technol, Fac Mat Sci & Engn, Topi 23640, KP, PakistanUniv Ulsan, Dept Phys, Ulsan 680749, South Korea
Hussain, Ali
Ahn, Chang Won
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Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South KoreaUniv Ulsan, Dept Phys, Ulsan 680749, South Korea
Ahn, Chang Won
Ullah, Aman
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Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South KoreaUniv Ulsan, Dept Phys, Ulsan 680749, South Korea
Ullah, Aman
Lee, Jae Shin
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Univ Ulsan, Sch Mat Sci & Engn, Ulsan 680749, South KoreaUniv Ulsan, Dept Phys, Ulsan 680749, South Korea
Lee, Jae Shin
Kim, Ill Won
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机构:
Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South KoreaUniv Ulsan, Dept Phys, Ulsan 680749, South Korea
机构:
Inst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, ArgentinaInst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, Argentina
Camargo, J.
Prado Espinosa, A.
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Inst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, ArgentinaInst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, Argentina
Prado Espinosa, A.
Ramajo, L.
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Inst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, ArgentinaInst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, Argentina
Ramajo, L.
Castro, M.
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Inst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, ArgentinaInst Res Mat Sci & Technol INTEMA, Juan B Justo 4302,B7608FDQ, Mar Del Plata, Buenos Aires, Argentina
机构:
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
Woo, Jong-Chang
Kim, Chang-Il
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Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
Kim, Chang-Il
Ahn, Chang-Won
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Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, EHSRC, Ulsan 680749, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
Ahn, Chang-Won
Seog, Hae-Jin
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机构:
Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, EHSRC, Ulsan 680749, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
Seog, Hae-Jin
Kim, Ill-Won
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机构:
Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
Univ Ulsan, EHSRC, Ulsan 680749, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
机构:
Hong Kong Polytech Univ, Mat Res Ctr, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R ChinaHong Kong Polytech Univ, Mat Res Ctr, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Lin, Dunmin
Kwok, K. W.
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Hong Kong Polytech Univ, Mat Res Ctr, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Mat Res Ctr, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Kwok, K. W.
Chan, H. W. L.
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Hong Kong Polytech Univ, Mat Res Ctr, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Mat Res Ctr, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China