Electron Spin Coherence and Electron Nuclear Double Resonance of Bi Donors in Natural Si

被引：88

作者：

George, Richard E. ^{[1
]}

Witzel, Wayne ^{[2
]}

Riemann, H. ^{[3
]}

Abrosimov, N. V. ^{[3
]}

Noetzel, N. ^{[3
]}

Thewalt, Mike L. W. ^{[4
]}

Morton, John J. L. ^{[1
,5
]}

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, CAESR, Oxford OX1 3PU, England

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Inst Crystal Growth, D-12489 Berlin, Germany

[4] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[5] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

SILICON; RELAXATION; DECAY;

D O I：

10.1103/PhysRevLett.105.067601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Donors in silicon hold considerable promise for emerging quantum technologies, due to their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more widely studied group V donors, such as phosphorous, in several significant respects: They have the strongest binding energy (70.98 meV), a large nuclear spin (I = 9/2), and a strong hyperfine coupling constant (A = 1475.4 MHz). These larger energy scales allow us to perform a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin decoherence of P donors in natural silicon. We report the electron-nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.

引用

页数：4

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