Wavelength conversion using polarization dependence of cross-phase modulation in an InGaAlAs multiple-quantum-well electroabsorption modulator

被引:0
|
作者
Zhou, XP [1 ]
Shimizu, H [1 ]
Chaiyasit, K [1 ]
Nakano, Y [1 ]
机构
[1] Univ Tokyo, JST, SORST, Res Ctr Adv Sci & Technol,Meguro Ku, Tokyo 1538904, Japan
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We experimentally demonstrate wavelength conversion using polarization dependence of cross-phase-modulation in an InGaAlAs MQW-EA modulator that can operate at small signal power less than +8dBm and give very high extinction ratio over 31dB.
引用
收藏
页码:39 / 42
页数:4
相关论文
共 50 条
  • [41] All optical wavelength conversion via cross-phase modulation in chalcogenide glass rib waveguides
    Lamont, M. R. E.
    Ta'eed, V.
    Moss, D.
    Madden, S.
    Luther-Davies, B.
    Eggleton, B. J.
    2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2006, : 92 - +
  • [42] All-optical wavelength conversion based on cascaded effect of cross-gain modulation and cross-phase modulation in SOAs
    Wu Zhaoxi
    Huang Yuanqing
    Weng Zihua
    Ye Ruifang
    INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2007: RELATED TECHNOLOGIES AND APPLICATIONS, 2008, 6625
  • [43] Broadband and Enhanced Picosecond Cross-phase Modulation in InGaAs /AlAsSb Quantum Well Waveguides
    Cong, G. W.
    Akimoto, R.
    Nagase, M.
    Mozume, T.
    Hasama, T.
    Ishikawa, H.
    2008 34TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC), 2008,
  • [44] POLARIZATION DEPENDENCE OF PHOTO-DETECTION IN STRAINED MULTIPLE-QUANTUM-WELL SEMICONDUCTOR-LASERS
    HIGASHI, T
    IKEDA, T
    OGITA, S
    MORITO, K
    SODA, H
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (02) : 286 - 292
  • [45] Analytical solution for SOA-based all-optical wavelength conversion using transient cross-phase modulation
    Dong, Jianji
    Fu, Songnian
    Zhang, Xinliang
    Shum, P.
    Zhang, Liren
    Huang, Dexiu
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (21-24) : 2554 - 2556
  • [46] Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process
    Ng, SL
    Lim, HS
    Lam, YL
    Chan, YC
    Ooi, BS
    Aimez, V
    Beauvais, J
    Beerens, J
    APPLIED PHYSICS LETTERS, 2002, 81 (11) : 1958 - 1960
  • [47] GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform
    Akie, Minami
    Fujisawa, Takeshi
    Sato, Takanori
    Arai, Masakazu
    Saitoh, Kunimasa
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (06)
  • [48] Hybrid Silicon Evanescent Phase Modulator Based on Carrier Depletion in Offset Multiple-Quantum-Well
    Chen, Hui-wen
    Kuo, Ying-hao
    Bowers, John E.
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 92 - 93
  • [49] Cross-phase modulation efficiency in offset quantum-well and centered quantum-well semiconductor optical amplifiers
    Masanovic, ML
    Lal, V
    Skogen, EJ
    Barton, JS
    Summers, JA
    Raring, JA
    Coldren, LA
    Blumenthal, DJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (11) : 2364 - 2366
  • [50] Integrated InGaAlAs/InP laser-modulator using an identical multiple quantum well active layer
    Saravanan, BK
    Hanke, C
    Knödl, T
    Peschke, M
    Macaluso, R
    Stegmüller, B
    OPTOELECTRONIC INTEGRATED CIRCUITS VII, 2005, 5729 : 160 - 169