A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

被引：22

作者：

Sebastiano, Fabio ^{[1
]}

Breems, Lucien J. ^{[1
]}

Makinwa, Kofi A. A. ^{[2
]}

Drago, Salvatore ^{[1
]}

Leenaerts, Domine M. W. ^{[1
]}

Nauta, Bram ^{[3
]}

机构：

[1] NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[2] Delft Univ Technol, Elect Instrumentat Lab, Fac Elect Engn Comp Sci & Math, Delft, Netherlands

[3] Univ Twente, CTIT Res Inst, IC Design Grp, NL-7500 AE Enschede, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2011年 / 46卷 / 07期

关键词：

Charge carrier mobility; CMOS integrated circuits; crystal-less clock; frequency reference; low voltage; MOSFET; sigma-delta modulation; smart sensors; temperature compensation; temperature sensors; ultra-low power; wireless sensor networks; INACCURACY; 3-SIGMA;

D O I：

10.1109/JSSC.2011.2143630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55 degrees C to 125 degrees C, the frequency spread of the complete reference is less than +/- 0.5% after a two-point trim and less than +/- 2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm(2) and draws 42.6 mu A from a 1.2-V supply at room temperature.

引用

页码：1544 / 1552

页数：9

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