Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates

被引：6

作者：

Pozina, G. ^{[1
]}

Monemar, B. ^{[1
]}

Paskov, P. P. ^{[1
]}

Hemmingsson, C. ^{[1
]}

Hultman, L. ^{[1
]}

Amano, H. ^{[2
]}

Akasaki, I. ^{[2
]}

Paskova, T. ^{[3
]}

Figge, S. ^{[3
]}

Hommel, D. ^{[3
]}

Usui, A. ^{[4
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

[4] Furukawa Co Ltd, R&D Div, Tsukuba, Ibaraki 3050856, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

关键词：

III-nitrides; Mg-doped; metastability; luminescence;

D O I：

10.1016/j.physb.2007.08.173

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical metastability in Mg-doped GaN layers grown by metal organic vapor phase epitaxy on thick GaN templates grown by halide vapor phase epitaxy has been studied by photoluminescence (PL) and cathodoluminescence (CL). The total Mg concentration varies from 1 x 10(19) to 1 x 10(20) cm(-3). Both PL and CL spectra change the initial shape within a few minutes exposure to the excitation source. The effect is permanent at low temperatures but the emission spectrum can be recovered to its initial shape after heating to room temperature. The difference in PL and CL spectra is explained by activation of different regions in the sample by laser and electrons, respectively. In CL the increase of the defect-related luminescence seems to be connected with an enhanced structural defect reaction under electron irradiation, which competes with the regular radiative recombination, while in PL the main effect is related to dissociation of Mg-H complexes with consequent passivation of the residual shallow acceptors. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：302 / 306

页数：5

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