Comparison between static and dynamic simulations of ion reflection and sputtering from layered materials

被引:6
|
作者
Kawakami, R [1 ]
Ohya, K [1 ]
机构
[1] Univ Tokushima, Fac Engn, Tokushima 7708506, Japan
关键词
static simulation; dynamic simulation; layered material; reflection; sputtering;
D O I
10.1143/JJAP.40.5399
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the computer simulation program EDDY, a comparison between static and dynamic simulations of ion reflection and sputtering from layered materials is made. The D+ ion bombardment of a carbon-layered tungsten bulk material and vice versa serves a model for layered materials. To make the comparison, the influence of the deposition layers on the emission processes is described. The static simulation, which does not allow atomic composition changes in solids, gives a rapid change of such emissions owing to an increase in the thickness of the layers. Such a phenomenon is suitable for the dynamic simulation of W-layered C because of smaller erosion and recoil implantation into the bulk for the W layer. For C-layered W, the dynamic simulation results show gradual changes due to larger erosion and recoil implantation of the C layer. For this reason, the thin C layer has a weak effect on the reflection coefficient and the sputtering yield of the bulk.
引用
收藏
页码:5399 / 5406
页数:8
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