The effect of homogenization temperature (1000 ?, 1100 ? and 1200 ?) on creep performance of laser powder bed fusion-fabricated Inconel 718 at 650 ? was investigated utilizing the small punch creep test method and the small punch creep specimens loaded perpendicular to the building direction, which can well reflect the comprehensive performance of the specimen in all radial directions of the circular plane parallel to the building direction. The results show that the specimen homogenized at 1100? for 1 h followed by double-aging treatment exhibited better creep performance than the other two ones homogenized at 1000 ? and 1200?. Such enhancement of the creep performance is attributed to fewer crack initiation sites, the higher GB sliding rate near the precipitates at grain boundaries to release stress concentrations, the higher strengthening effect of gamma & PRIME;& PRIME; phases in grains, and the more effective resistance to cracking by the special GBs than the other specimens. The basic mechanism for the small punch creep of laser powder bed fusion-fabricated Inconel 718 at 650 ? was elucidated by the careful characterization of the microstructures and theoretical calculations. A feasible ho-mogenization strategy for further improving the SPC performance of laser powder bed fusion-fabricated Inconel 718 alloy is to make the specimen have fewer and smaller granular precipitates at GBs, and more tortuous GBs by introducing more special GBs with considering the grain size. Such a key point can be used to determine the appropriate subsequent heat treatment for laser powder bed fusion thin-walled Inconel 718 component.
机构:
Indian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Sangareddy 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Sangareddy 502284, Telangana, India
Naskar, Subhendu
Suryakumar, S.
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Indian Inst Technol Hyderabad, Dept Mech & Aerosp Engn, Sangareddy 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Sangareddy 502284, Telangana, India
Suryakumar, S.
Panigrahi, Bharat B.
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机构:
Indian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Sangareddy 502284, Telangana, IndiaIndian Inst Technol Hyderabad, Dept Mat Sci & Met Engn, Sangareddy 502284, Telangana, India
机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Wang, Y. C.
Wang, L. Y.
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机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Wang, L. Y.
Zhang, B.
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机构:
Northeastern Univ, Sch Mat Sci & Engn, Key Lab Anisotropy & Texture Mat, Minist Educ, 3-11 Wenhua Rd, Shenyang 110819, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Zhang, B.
Song, Z. M.
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机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Song, Z. M.
Luo, X. M.
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Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Luo, X. M.
Zhang, G. P.
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机构:
Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R ChinaChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
Zhang, G. P.
[J].
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,
2022,
854
机构:
Univ Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, EnglandUniv Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, England
Bhuwal, Akash Singh
Pang, Yong
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机构:
Univ Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, England
Queen Mary Univ London, Sch Engn & Mat Sci, Mile End Rd, London E1 4NS, EnglandUniv Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, England
Pang, Yong
Maskery, Ian
论文数: 0|引用数: 0|
h-index: 0|
机构:
Univ Nottingham, Fac Engn, Ctr Addit Mfg, Nottingham NG7 2RD, Notts, EnglandUniv Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, England
Maskery, Ian
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Ashcroft, Ian
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机构:
Sun, Wei
Liu, Tao
论文数: 0|引用数: 0|
h-index: 0|
机构:
Univ Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, England
Queen Mary Univ London, Sch Engn & Mat Sci, Mile End Rd, London E1 4NS, EnglandUniv Nottingham, Fac Engn, Univ Pk, Nottingham NG7 2RD, England
机构:
Penn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USAPenn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Tripathi, Varad
Armstrong, Andrew
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机构:
Penn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USAPenn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Armstrong, Andrew
Gong, Xi
论文数: 0|引用数: 0|
h-index: 0|
机构:
Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16801 USAPenn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Gong, Xi
Manogharan, Guha
论文数: 0|引用数: 0|
h-index: 0|
机构:
Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16801 USAPenn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Manogharan, Guha
Simpson, Timothy
论文数: 0|引用数: 0|
h-index: 0|
机构:
Penn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16801 USAPenn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Simpson, Timothy
De Meter, Edward
论文数: 0|引用数: 0|
h-index: 0|
机构:
Penn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA
Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16801 USAPenn State Univ, Dept Ind & Mfg Engn, University Pk, PA 16801 USA