Terahertz imaging with Si MOSFET focal-plane arrays

被引:24
|
作者
Lisauskas, A. [1 ]
Glaab, D. [1 ]
Roskos, H. G. [1 ]
Oejefors, E. [2 ]
Pfeiffer, U. R. [2 ]
机构
[1] Goethe Univ Frankfurt, Inst Phys, Max Von Laue Str 1, D-60438 Frankfurt, Germany
[2] Univ Wuppertal, High Frequency & Commun Technol, D-42119 Wuppertal, Germany
来源
关键词
silicon detectors; distributed resistive mixing; terahertz focal plane array; NONRESONANT DETECTION; RADIATION; TRANSISTOR; GENERATION;
D O I
10.1117/12.809552
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-mu m CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/root Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.
引用
收藏
页数:11
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