Terahertz imaging with Si MOSFET focal-plane arrays

被引：24

作者：

Lisauskas, A. ^{[1
]}

Glaab, D. ^{[1
]}

Roskos, H. G. ^{[1
]}

Oejefors, E. ^{[2
]}

Pfeiffer, U. R. ^{[2
]}

机构：

[1] Goethe Univ Frankfurt, Inst Phys, Max Von Laue Str 1, D-60438 Frankfurt, Germany

[2] Univ Wuppertal, High Frequency & Commun Technol, D-42119 Wuppertal, Germany

来源：

TERAHERTZ TECHNOLOGY AND APPLICATIONS II | 2009年 / 7215卷

关键词：

silicon detectors; distributed resistive mixing; terahertz focal plane array; NONRESONANT DETECTION; RADIATION; TRANSISTOR; GENERATION;

D O I：

10.1117/12.809552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-mu m CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/root Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.

引用

页数：11

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