Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs

被引：2

作者：

Martin-Martinez, J. ^{[1
]}

Gerardin, S.

Rodriguez, R.

Nafria, M.

Aymerich, X.

Cester, A.

Paccagnella, A.

Ghidini, G.

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Barcelona 08193, Spain

[2] DEI Univ Padova, Padua, Italy

[3] ST Microelect, I-20041 Agrate Brianza, Italy

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2007.07.088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the impact of dielectric degradation in the MOSFET electrical characteristics after different levels of Fowler-Nordheim (FN) stress has been studied. A decrease in I-SAT and an increase of V-T have been observed. The interface trap density has been extracted from the sub-threshold slope of I-D-V-GS curves. The results show a direct relation between the generated interfacial traps and the observed changes in saturation current and threshold voltage. The wear out effects in the devices have been extrapolated to operation voltages, pointing out that the transistors can fulfill the reliability criteria, even when working in analog applications. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1349 / 1352

页数：4

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