Dynamic simulation of radiation-induced defect formation in multicomponent layered materials in the cascade stage

被引：0
|
作者：
Ber, BY
Zhurkin, EE
Kudryavtsev, YA
Trushin, YV
Kharlamov, VS
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia
来源：
INORGANIC MATERIALS | 1998年 / 34卷 / 10期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A physical model is proposed for ballistic processes under high-fluence ion bombardment, with allowance made for sputtering, ion-bean mixing, and accumulation of radiation-induced defects. Simulated sputtering depth profiles of irradiated Al/GaAs heterostructures are compared with experimental data.
引用
收藏
页码：1042 / 1048
页数：7
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