Spin-orbit interaction and its application to spin interference device

被引:0
|
作者
Nitta, J [1 ]
Koga, T [1 ]
Meijer, FE [1 ]
机构
[1] NTT Cooperat, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
D O I
10.1142/9789812705556_0010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Gate-controlled Abaronov-Bohm (AB) experiments are performed with AB-ring samples in the presence of spin-orbit interaction. The magnetoresistance at zero magnetic field shows minima in the whole gate voltage range. The observed minima in magnetoresistance at zero magnetic field can be explained in terms of anti-weak-localization. However, the resistance minima at zero magnetic field exhibits oscillatory behaviors as a function of the gate voltage. The possible reason for this oscillation can be attributed to the phase interference induced by the spin-orbit interaction.
引用
收藏
页码:55 / 60
页数:6
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