Influence of irradiation on excess currents in SiC pn structures

被引：3
|
作者：
Stre'chuk, AM
Kozlovski, VV
Lebedev, AA
Smirnova, NY
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] State Tech Univ, St Petersburg 195251, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
excess currents; electron and proton irradiation; 6H-SiC pn structures;
D O I：
10.4028/www.scientific.net/MSF.483-485.1001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Excess currents of the different nature in 6H-SiC pn structures of the different origin and parameters were investigated. The effect of the suppression of the forward and reverse excess currents were observed after 0.9 MeV electron (dose 5x10(16) ÷ 1.6x10(17)) and 8 MeV proton (dose 5x 10(15) cm(-2)) irradiation for structures with shunts which is probably due to the presence of relatively small inhomogeneities. The shunts in another group of pn structures probably are more high capability and they are more stable against degradation during irradiation.
引用
收藏
页码：1001 / 1004
页数：4
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