Impact of Fluorine on Idsat of Field-Effect Transistor

被引：0

作者：

Zhu, Lei ^{[1
]}

Ong, Kenny ^{[1
]}

Mo, Z. Q. ^{[1
]}

Zhao, S. P. ^{[1
]}

Lam, Jeffrey ^{[1
]}

机构：

[1] GLOBALFOUNDRIES Singapore Pte Ltd, PTF FA Dept, 60 Woodlands Ind Pk D,St 2, Singapore 738406, Singapore

来源：

PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is reported in this paper that Idsat can be affected by fluorine implant under certain circumstance. The mechanism is believed to be that highly mobile fluorine atoms in reacting with Si vacancies or interstitials to further impact on the active dopant causing the Idsat change.

引用

页码：340 / 341

页数：2

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