Structural and optical properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE

被引：0
|
作者：
Galkin, N. G. [1 ]
Chusovitin, E. A. [1 ]
Goroshko, D. L. [1 ]
Bayazitov, R. M. [2 ]
Batalov, R. I. [2 ]
Shamirzaev, T. S. [3 ]
Gutakovsriy, A. K. [3 ]
Zhuravlev, K. S. [3 ]
Latyshev, A. V. [3 ]
机构：
[1] Russian Acad Sci, Far Eastern Branch, Inst Automat & Control Proc, Rdaio St 5, Vladivostok 690041, Russia
[2] Russian Acad Sci, Kazan Phys Tech Inst, Kazan 420029, Russia
[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630900, Russia
来源：
SEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING | 2007年 / 6669卷
关键词：
ion beam implantation; atomic force microscopy; optical spectroscopy; silicon overgrowth; nanocrystalline materials;
D O I：
10.1117/12.733360
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The morphology and optical properties of Si samples implanted by low-energy Fe+ ions with different fluencies (1x10(15)-1.8x10(17) cm(-2)) and further subjected to pulsed ion-beam treatment (PIBT) have been studied by atomic force microscopy and optical reflectance spectroscopy. It was proved that the iron disilicide (beta-FeSi2) crystallites have been formed on the surface of Si substrate as a result of ion implantation and PIBT. The method of ultrahigh vacuum and low-temperature (T = 850 degrees C) cleaning of Fe-implanted Si samples has been used for the first time. It was found that it is possible to form smooth epitaxial Si films with reconstructed surface and thickness up to 1.7 mu m by molecular beam epitaxy (MBE) on the surface of Si samples implanted at a fluence of up to 1x10(16) CM-2. Further increasing implantation fluence results into disruption of epitaxial Si growth and strong increase of surface relief roughness due to 3D silicon growth mechanism. Preservation of beta-FeSi2 precipitates inside Si matrix after the formation of a cap epitaxial Si layer has been confirmed by optical spectroscopy data. Low temperature photoluminescence measurements in the range of 1400-1700 nm showed that light emission of the Si/beta-FeSi2/Si heterostructures formed is due to contributions from beta-3FeSi(2) precipitates and dislocations.
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页数：11
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