A spectroscopic ellipsometry investigation of RF-sputtered crystalline vanadium pentoxide thin films

被引:2
|
作者
Oukassi, S. [1 ]
Gagnard, X. [1 ]
Salot, R. [2 ]
Zahorski, D. [3 ]
Stehle, J. L. [3 ]
Piel, J. P. [3 ]
Pereira-Ramos, J. P. [4 ]
机构
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] CEA, DTNM, LCH, F-38054 Grenoble, France
[3] SOPRA, F-92270 Bois Colombes, France
[4] CNRS, ICMPE, UMR 7182, GESMAT, F-94320 Thiais, France
关键词
D O I
10.1002/pssc.200777744
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Vanadium pentoxide (V2O5) raised much interest, in several fields, specially relating to thin film lithium microbatteries Yet, literature mentioned different results a electrochemical performance of these film with thickness. The present work is focused on the use of spectroscopic ellipsometry on V2O5 crystalline thin film during growth. Optical properties were determined in the near-IR-visible range (0.25-2 mu m). Effective media approximation base model was developed and was used to determine the optical constants of thin films. Thickness and roughness obtained corresponded well to respectively SEM and AFM results: Based on optical refractive index evolution, a density gradient was' identified through the film thickness: These results could explain in parts the thickness influence on the electrochemical performance of V2O5 thin films.
引用
收藏
页码:1109 / +
页数:3
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