Good ferroelectricity of Pb(Zr,Ti)O3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395°C (vol 42, pg 1085, 2003)

被引：0

作者：

Asano, G

Oikawa, T

Funakubo, H

Saito, K

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] PANalyt Applicat Lab, Minato Ku, Tokyo 1050013, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 11A期

关键词：

D O I：

10.1143/JJAP.42.L1346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1346 / L1346

页数：1

共 50 条

[1] Good ferroelectricity of Pb(Zr,Ti)O3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395°C
Asano, G
Oikawa, T
Funakubo, H
Saito, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (9AB): : L1083 - L1086
[2] Erratum: Good Ferroelectricity of Pb(Zr,Ti)O3 Thin Films Fabricated by Highly Reproducible Deposition on Bottom Ir Electrode at 395°C (Japanese Journal of Applied Physics, Part 2: Letters (2003) 42 (L1083))
Asano, G., 1600, Japan Society of Applied Physics (42):
[3] Highly c-axis oriented Pb(Zr,Ti)O3 thin films grown on Ir electrode barrier and their electrical properties
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APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1484 - 1486
[4] Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties
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[5] Bottom electrode crystallization of Pb(Zr, Ti)O3 thin films made by RF magnetron sputtering
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[6] Characterization of Pb(Zr, Ti)O3 thin films fabricated by plasma enhanced chemical vapor deposition on Ir-based electrodes
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[7] Highly-reproducible preparation of Pb(Zr, Ti)O3 films at low deposition temperature by metal organic chemical vapor deposition
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[8] Highly-reproducible preparation of Pb(Zr, Ti)O3 films at low deposition temperature by metal organic chemical vapor deposition
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[9] Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer
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[10] Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer
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