Sources of n-type conductivity in ZnO

被引:52
|
作者
McCluskey, M. D. [1 ]
Jokela, S. J. [1 ]
机构
[1] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA
基金
美国国家科学基金会;
关键词
hydrogen; infrared; ZnO; SIMS;
D O I
10.1016/j.physb.2007.08.186
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Zinc oxide (ZnO) is a strong candidate for energy-efficient white fighting and numerous optoelectronic applications. Hydrogen impurities play important roles, good and bad, in the pursuit of reliable p-type doping of ZnO. In pervious work, we identified hydrogen donors with the back-bonded or "anti-bonding" orientation, with an angle of 111 degrees to the c-axis. It is possible, however, that these hydrogen donors are complexed with another defect. Impurities besides hydrogen are also donors in as-grown ZnO. Results from secondary ion mass spectroscopy (SIMS) show significant concentrations of Al in samples of bulk single-crystal ZnO obtained from Cermet, Inc., Ga and B in samples from Eagle-Picher, and Si in both. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:355 / 357
页数:3
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