Communication-Fluorinated Plasma Treatments Using PTFE Substrates for Room-Temperature Silicon Wafer Direct Bonding

被引：5
|
作者：
Wang, Chenxi [1 ]
Suga, Tadatomo [2 ]
机构：
[1] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
[2] Univ Tokyo, Sch Engn, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 07期
基金：
美国国家科学基金会;
关键词：
15;
D O I：
10.1149/2.0121607jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We introduced polytetrafluoroethylene (PTFE) substrates and silicon wafers into oxygen plasma to form fluorinated oxide layers on the silicon surfaces, similar to sputtering processes. After a short plasma treatments (similar to 60 s), fluorinated oxide layers were formed and could be controlled by adjusting the size of the PTFE substrates. Two wafers were brought into contact at room temperature (similar to 25 degrees C), and the surface energy was significantly improved to similar to 1.8 J/m(2), even without employing heating. This surface energy is sufficiently high to withstand subsequent mechanical processing. No defects or nanopores were observed in the bonding interface. (C) 2016 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P393 / P395
页数：3
相关论文
共 50 条
  • [21] Room-Temperature Wafer Bonding With Smooth Au Thin Film in Ambient Air Using Ar RF Plasma Activation
    Okumura, Ken
    Higurashi, Eiji
    Suga, Tadatomo
    Hagiwara, Kei
    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2014, : 26 - 26
  • [22] Room-temperature wafer bonding of silicon and lithium niobate by means of argon-beam surface activation
    Takagi, H
    Maeda, R
    Suga, T
    INTEGRATED FERROELECTRICS, 2002, 50 : 53 - 59
  • [23] Room-temperature wafer bonding using smooth gold thin films for wafer-level MEMS packaging
    Kunimune, Yutaka
    Okumura, Ken
    Higurashi, Eiji
    Suga, Tadatomo
    Hagiwara, Kei
    2016 International Conference on Electronics Packaging (ICEP), 2016, : 439 - 442
  • [24] Room temperature wafer direct bonding of smooth Si surfaces recovered by Ne beam surface treatments
    Kurashima, Yuichi
    Maeda, Atsuhiko
    Takagi, Hideki
    APPLIED PHYSICS LETTERS, 2013, 102 (25)
  • [25] Characterization of bonding interface prepared by room-temperature Si wafer direct bonding using the surface smoothing effect of a Ne fast atom beam
    Kurashima, Yuichi
    Maeda, Atsuhiko
    Takagi, Hideki
    MICROELECTRONIC ENGINEERING, 2014, 118 : 1 - 5
  • [26] Room-temperature wafer bonding using smooth Au thin films for integrated plasmonic devices
    Yamamoto, Michitaka
    Matsumae, Takashi
    Kurashima, Yuichi
    Takagi, Hideki
    Suga, Tadatomo
    Itoh, Toshihiro
    Higurashi, Eiji
    2018 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN), 2018, : 64 - 65
  • [27] Investigation of plasma treatment conditions for wafer-scale room-temperature bonding using ultrathin Au films in ambient air
    Yamamoto M.
    Matsumae T.
    Kurashima Y.
    Takagi H.
    Suga T.
    Itoh T.
    Higurashi E.
    IEEJ Transactions on Sensors and Micromachines, 2019, 139 (07) : 217 - 218
  • [28] Electrically Driven Photonic-Crystal Lasers on Silicon Substrates Using Direct Wafer Bonding
    Takeda, Koji
    Sato, Tomonari
    Fujii, Takuro
    Kuramochi, Eiichi
    Notomi, Masaya
    Hasebe, Koichi
    Kakitsuka, Takaaki
    Matsuo, Shinji
    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
  • [29] Low temperature germanium to silicon direct wafer bonding using free radical exposure
    Byun, Ki Yeol
    Ferain, Isabelle
    Fleming, Pete
    Morris, Michael
    Goorsky, Mark
    Colinge, Cindy
    APPLIED PHYSICS LETTERS, 2010, 96 (10)
  • [30] Room-temperature wafer scale bonding using smoothed Au seal ring surfaces for hermetic sealing
    Kurashima, Yuichi
    Maeda, Atsuhiko
    Takagi, Hideki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
12345