Coherence and dephasing in self-assembled quantum dots

被引:0
|
作者
Hvam, JM [1 ]
Leosson, K [1 ]
Birkedal, D [1 ]
机构
[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
关键词
quantum dots; exciton coherence; dephasing; homogeneous and inhomogeneous line widths;
D O I
暂无
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
We measured dephasing times in InGaAlAs self-assembled quantum dots at low temperature using degenerate four-wave mixing. At OK, the coherence time of the quantum dots is lifetime limited, whereas at finite temperatures pure dephasing by exciton-phonon interactions governs the quantum dot coherence. The inferred homogeneous line widths are significantly smaller than the line widths usually observed in the photoluminescence from single quantum dots indicating an additional inhomogeneous broadening mechanism in the latter.
引用
收藏
页码:122 / 125
页数:4
相关论文
共 50 条
  • [11] Composition of self-assembled quantum dots
    Lang, C
    [J]. MATERIALS SCIENCE AND TECHNOLOGY, 2003, 19 (04) : 411 - 421
  • [12] An introduction to self-assembled quantum dots
    Riel, B. J.
    [J]. AMERICAN JOURNAL OF PHYSICS, 2008, 76 (08) : 750 - 757
  • [13] Self-assembled semiconductor quantum dots
    Warburton, RJ
    [J]. CONTEMPORARY PHYSICS, 2002, 43 (05) : 351 - 364
  • [14] Self-assembled metal quantum dots
    Chen, L. J.
    Su, P. Y.
    Liang, J. M.
    Hu, J. C.
    Wu, W. W.
    Cheng, S. L.
    [J]. International Journal of Nanoscience, Vol 3, No 6, 2004, 3 (06): : 877 - 889
  • [15] Epitaxially self-assembled quantum dots
    Petroff, PM
    Lorke, A
    Imamoglu, A
    [J]. PHYSICS TODAY, 2001, 54 (05) : 46 - 52
  • [16] Long dephasing time in self-assembled InAs quantum dots at over 1.3 μm wavelength
    Ishi-Hayase, J.
    Akahane, K.
    Yamamoto, N.
    Sasaki, M.
    Kujiraoka, M.
    Ema, K.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [17] Excitation spectrum, relaxation and coherence of single self-assembled CdSe quantum dots
    Hundt, A
    Flissikowski, T
    Lowisch, M
    Rabe, M
    Henneberger, F
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (01): : 159 - 163
  • [18] Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots
    Gong, Ming
    Duan, Kaimin
    Li, Chuan-Feng
    Magri, Rita
    Narvaez, Gustavo A.
    He, Lixin
    [J]. PHYSICAL REVIEW B, 2008, 77 (04)
  • [19] Designing quantum systems in self-assembled quantum dots
    Korkusinski, M
    Sheng, W
    Hawrylak, P
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 238 (02): : 246 - 249
  • [20] Charged excitons in self-assembled quantum dots
    Warburton, RJ
    Urbaszek, B
    McGhee, EJ
    Schulhauser, C
    Högele, A
    Karrai, K
    Govorov, AO
    Garcia, JM
    Gerardot, BD
    Petroff, PM
    [J]. QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 2003, 737 : 95 - 105