MOS transistor model and fast aiming simulator

被引：1
|
作者：
Yang, HZ [1 ]
Cai, X [1 ]
Jia, YW [1 ]
机构：
[1] Tsing Hua Univ, Dept Elect Engn, Lib EDA, Beijing 100084, Peoples R China
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 07期
关键词：
D O I：
10.1049/el:19990403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new table-based region-wise-linear MOS transistor model and analytical solution of generic sub-circuit primitive is presented. The MOS model includes the body effect and this subcircuit primitive can also handle floating capacitors. Compared with HSPICE the results of the system are very accurate with an error of <3%, and there is speedup of 1-2 orders of magnitude.
引用
收藏
页码：561 / 563
页数：3
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