Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation

被引：18
|
作者：
Pellegrino, P
Pérez-Rodriguez, A
Garrido, B
González-Varona, O
Morante, JR
Marcinkevicius, S
Galeckas, A
Linnros, J
机构：
[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain
[2] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 01期
关键词：
D O I：
10.1063/1.1634692
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The analysis of the white photoluminescence (PL) from Si+ and C+ coimplanted SiO2 is reported as a function of the implanted dose. By both steady and time-resolved measurements, the presence of several components in the emission between 2 and 3.3 eV has been resolved. The decays of the PL transients are characterized by short lifetimes, below 2 ns. For the emission at 2.1-2.3 eV, photoluminescence decay transients have been measured, obtaining a fast relaxation component of about 50-70 ps, followed by a slower component of the order of 1 ns. These values contrast with the very slow behavior, characteristic for the light emission from Si nanocrystals, and make carbon-related emitting centers interesting for optoelectronic applications where fast switching behavior is important. (C) 2004 American Institute of Physics.
引用
收藏
页码：25 / 27
页数：3
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