Pulsed femtosecond excimer laser-induced chemically clean etching of diamond

被引：3
|
作者：
Malshe, AP [1 ]
Ozkan, AM [1 ]
Railkar, TA [1 ]
Molian, PA [1 ]
Brown, WD [1 ]
机构：
[1] Univ Arkansas, Dept Mech Engn, Mat & Mfg Res Lab MRL, Fayetteville, AR 72701 USA
来源：
ADVANCES IN LASER ABLATION OF MATERIALS | 1998年 / 526卷
关键词：
D O I：
10.1557/PROC-526-123
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemically clean etching of thermodynamically metastable diamond using a 500 femtosecond (fs), 248 nm KrF excimer laser is reported. The experimental results, characterized by micro-Raman spectroscopy indicate that unlike nanosecond (ns) pulsed laser processing of diamond, fs laser irradiation of the surface does not generate any graphite or amorphous carbon residues. Microstructural analysis of the fs pulsed laser etched surface indicates streaks.
引用
收藏
页码：123 / 129
页数：7
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