The world's first high voltage GaN-on-Diamond power semiconductor devices

被引：8
|
作者：
Baltynov, Turar [1 ]
Unni, Vineet [1 ]
Narayanan, E. M. Sankara [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
SOLID-STATE ELECTRONICS | 2016年 / 125卷
关键词：
AlGaN/GaN HEMT; GaN-on-Diamond; Circular HEMT; Breakdown voltage; Capacitance-voltage; HEMTS;
D O I：
10.1016/j.sse.2016.07.022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 mu m and source field plate length of 3 mu m show an off-state breakdown voltage of similar to 1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：111 / 117
页数：7
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