Excitons and electron-hole plasmas in highly excited GaN

被引：0

作者：

Nagai, T ^{[1
]}

Inagaki, TJ ^{[1
]}

Kanemitsu, Y ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied photoluminescence (PL) properties of GaN thin films at low temperatures for various excitation intensities. Under weak excitation intensities, the free exciton line as well as the bound exciton line appear in the PL spectrum. With an increase of the excitation intensity, the Wine and the P-line due to inelastic exciton-exciton interactions are clearly observed. Under strong excitation intensities, electron-hole plasmas (EHP) emission appears at lower energy below the M-line. The radiative recombination processes of highly excited GaN are discussed.

引用

页码：495 / 498

页数：4

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