Dielectric breakdown in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junction

被引：38
|
作者：
Khan, Ayaz Arif [1 ]
Schmalhorst, J. [1 ]
Thomas, A. [1 ]
Schebaum, O. [1 ]
Reiss, G. [1 ]
机构：
[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期
关键词：
D O I：
10.1063/1.2939571
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The time-dependent dielectric breakdown has been investigated in Co-Fe-B/MgO/Co-Fe-B junctions by voltage ramp experiments and focused on its dependence on the barrier thickness, junction area, polarity of the applied voltage, ramp speed, and annealing temperature. The results suggest that the breakdown voltage strongly depends both on the polarity of the applied voltage and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 degrees C. (C) 2008 American Institute of Physics.
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页数：5
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