Dielectric breakdown in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junction

被引：38
|
作者：
Khan, Ayaz Arif [1 ]
Schmalhorst, J. [1 ]
Thomas, A. [1 ]
Schebaum, O. [1 ]
Reiss, G. [1 ]
机构：
[1] Univ Bielefeld, Dept Phys, D-33501 Bielefeld, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期
关键词：
D O I：
10.1063/1.2939571
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The time-dependent dielectric breakdown has been investigated in Co-Fe-B/MgO/Co-Fe-B junctions by voltage ramp experiments and focused on its dependence on the barrier thickness, junction area, polarity of the applied voltage, ramp speed, and annealing temperature. The results suggest that the breakdown voltage strongly depends both on the polarity of the applied voltage and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 degrees C. (C) 2008 American Institute of Physics.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Dielectric breakdown in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junction
    Khan, Ayaz Arif
    Schmalhorst, J.
    Thomas, A.
    Schebaum, O.
    Reiss, G.
    Journal of Applied Physics, 2008, 103 (12):
  • [2] Elastic and inelastic conductance in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions
    Khan, Ayaz Arif
    Schmalhorst, J.
    Reiss, G.
    Eilers, G.
    Muenzenberg, M.
    Schuhmann, H.
    Seibt, M.
    PHYSICAL REVIEW B, 2010, 82 (06)
  • [3] Dielectric breakdown and inelastic electron tunneling spectroscopy of top and bottom pinned Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions
    Khan, Ayaz Arif
    Schmalhorst, J.
    Thomas, A.
    Drewello, V.
    Reiss, G.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)
  • [4] Composition and Annealing Temperature Dependence of Magnetic Properties in MgO/Co-Fe-B/Ta/Co-Fe-B/MgO Films
    Sabino, Maria Patricia Rouelli
    Ter Lim, Sze
    Tran, Michael
    IEEE TRANSACTIONS ON MAGNETICS, 2014, 50 (11)
  • [5] Influence of chemical and magnetic interface properties of Co-Fe-B/MgO/Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance
    Schmalhorst, J.
    Thomas, A.
    Reiss, G.
    Kou, X.
    Arenholz, E.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)
  • [6] Influence of chemical and magnetic interface properties of Co-Fe-B/MgO/Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance
    Thin Films and Nano Structures, Department of Physics, Bielefeld University, 33501 Bielefeld, Germany
    不详
    不详
    Journal of Applied Physics, 2007, 102 (05):
  • [7] Dependence of spin-transfer switching current on free layer thickness in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions
    Kubota, Hitoshi
    Fukushima, Akio
    Ootani, Yuichi
    Yuasa, Shinji
    Ando, Koji
    Maehara, Hiroki
    Tsunekawa, Koji
    Djayaprawira, David D.
    Watanabe, Naoki
    Suzuki, Yoshishige
    APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [8] Spin-Torque Ferromagnetic Resonance in W/Co-Fe-B/W/Co-Fe-B/MgO Stacks
    He, Congli
    Yu, Guoqiang
    Grezes, Cecile
    Feng, Jiafeng
    Zhao, Zhen
    Razavi, Seyed Armin
    Shao, Qiming
    Navabi, Aryan
    Li, Xiang
    He, Qing Lin
    Li, Mengyin
    Zhang, Jia
    Wong, Kin L.
    Wei, Dan
    Zhang, Guangyu
    Han, Xiufeng
    Amiri, Pedram Khalili
    Wang, Kang L.
    PHYSICAL REVIEW APPLIED, 2018, 10 (03):
  • [9] Impact of electron-electron interactions induced by disorder at interfaces on spin-dependent tunneling in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions
    Bernos, J.
    Hehn, M.
    Montaigne, F.
    Tiusan, C.
    Lacour, D.
    Alnot, M.
    Negulescu, B.
    Lengaigne, G.
    Snoeck, E.
    Aliev, F. G.
    PHYSICAL REVIEW B, 2010, 82 (06)
  • [10] Thermal stability of Ir-Mn/Co-Fe-B/Al-O/Co-Fe-B tunnel junctions
    Li, FF
    Sharif, R
    Jiang, LX
    Zhang, XQ
    Han, XF
    Wang, Y
    Zhang, Z
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
12345