Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films

被引：5
|
作者：
Alhuwaymel, Tariq F. [1 ,2 ]
Carpenter, Robert [3 ]
Yu, Chris Nga Tung [3 ]
Kuerbanjiang, Balati [3 ]
Abdullah, Ranjdar M. [1 ]
Lazarov, Vlado K. [3 ]
El-Gomati, Mohamed [1 ]
Hirohata, Atsufumi [1 ,4 ]
机构：
[1] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England
[2] KACST, Natl Nanotechnol Ctr, Riyadh, Saudi Arabia
[3] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 17期
基金：
英国工程与自然科学研究理事会;
关键词：
SPIN POLARIZATION; ENERGY;
D O I：
10.1063/1.4916817
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co2FeAl0.5Si0.5 (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be similar to 110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions. (c) 2015 AIP Publishing LLC.
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页数：4
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