A 1.5V 45mW direct conversion WCDMA receiver IC in 0.13μm CMOS

被引：0
|
作者：
Rogin, J [1 ]
Kouchev, I [1 ]
Huang, QT [1 ]
机构：
[1] Swiss Fed Inst Technol, Integrated Syst Lab, ETH, Zurich, Switzerland
来源：
2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS | 2003年 / 46卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：268 / +
页数：3
相关论文
共 50 条
  • [41] 1.5V 5.0MHz switched capacitor circuits in 1.2μm CMOS without voltage bootstrapper
    Wang, L
    Embabi, SHK
    Sanchez-Sinencio, E
    PROCEEDINGS OF THE IEEE 2001 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2001, : 17 - 20
  • [42] A 1V 6mW Inductorless Wideband LNA in 0.13μm RF CMOS
    Wang, Hongrui
    Yu, Zhiping
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 1496 - 1499
  • [43] A 1mm2 1.3 mW GSM/EDGE Digital Baseband Receiver ASIC in 0.13 μm CMOS
    Benkeser, C.
    Bubenhofer, A.
    Huang, Q.
    PROCEEDINGS OF THE 2010 18TH IEEE/IFIP INTERNATIONAL CONFERENCE ON VLSI AND SYSTEM-ON-CHIP, 2010, : 183 - 188
  • [44] A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver
    Rofougaran, A
    Chang, JYC
    Rofougaran, M
    Abidi, AA
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (07) : 880 - 889
  • [45] A 9mW Direct RF Sampling GPS Receiver Front-End in 0.13μm BiCMOS
    Barth, Carsten
    Linscott, Ivan R.
    Inan, Umran S.
    2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012), 2012, : 1287 - 1290
  • [46] A 1.55mW Mixed-Signal Integrating Mixer for Direct Spectrum Estimation in 0.13μm CMOS
    Banovic, Kevin
    Carusone, Anthony Chan
    2012 IEEE ASIAN SOLID STATE CIRCUITS CONFERENCE (A-SSCC), 2012, : 89 - 92
  • [47] A 25.5mW 10Gb/s inductorless receiver with an adaptive front-end in 0.13 μm CMOS
    Monga, Sushrant
    Chatterjee, Shouri
    2014 27TH IEEE INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE (SOCC), 2014, : 431 - 436
  • [48] A 12-mW fully integrated low-IF dual-band GPS receiver on 0.13-μm CMOS
    Abdelrahim, Tamer A.
    Elesseily, Tarek
    Abdou, Ahmed Saad
    Sharaf, Khaled M. W.
    2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 3034 - 3038
  • [49] A 1.7-mW-92-dBm Sensitivity Low-IF Receiver in 0.13-μm CMOS for Bluetooth LE Applications
    Silva-Pereira, Marco
    de Sousa, Jose T.
    Freire, Joao Costa
    Vaz, Joao Caldinhas
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (01) : 332 - 346
  • [50] A sub-0.18 mu m gate length CMOS technology for high performance (1.5V) and low power (1.0V)
    Rodder, M
    Hong, QZ
    Nandakumar, M
    Aur, S
    Hu, JC
    Chen, IC
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 563 - 566
12345