The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

被引：43

作者：

Ruddy, Frank H. ^{[1
]}

Seidel, John G. ^{[1
]}

机构：

[1] Westinghouse Elect Co, Sci & Technol Dept, Pittsburgh, PA 15235 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 263卷 / 01期

关键词：

silicon carbide; semiconductor; detector; radiation effects; gamma-rays;

D O I：

10.1016/j.nimb.2007.04.077

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 degrees C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of (CS)-C-137 gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：163 / 168

页数：6

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