A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices

被引:293
|
作者
Chin, Hui Shun [1 ]
Cheong, Kuan Yew [1 ]
Ismail, Ahmad Badri [1 ]
机构
[1] Univ Sains Malaysia, Energy Efficient & Sustainable Semicond Res Grp, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Penang, Malaysia
关键词
THIN-FILM COUPLES; LEAD-FREE SOLDERS; SILICON-CARBIDE; SILVER-PASTE; SEMICONDUCTOR; ELECTRONICS; AU; INTERCONNECTS; ENVIRONMENTS; RELIABILITY;
D O I
10.1007/s11663-010-9365-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, high-temperature power devices have become a popular discussion topic because of their various potential applications in the automotive, down-hole oil and gas industries for well logging, aircraft, space exploration, nuclear environments, and radars. Devices for these applications are fabricated on silicon carbide-based semiconductor material. For these devices to perform effectively, an appropriate die attach material with specific requirements must be selected and employed correctly. This article presents a review of this topic, with a focus on the die attach materials operating at temperatures higher than 623 K (350 A degrees C). Future challenges and prospects related to high-temperature die attach materials also are proposed at the end of this article.
引用
收藏
页码:824 / 832
页数:9
相关论文
共 50 条
  • [31] A New Die Attach Material for High Power Electronic Devices
    Zhang Ruifen
    Nantes, Donald
    Teo Lingling
    2019 IEEE 21ST ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2019, : 543 - 547
  • [32] An analytical review on interfacial reactions in high-temperature die-attach: the insights into the effect of surface metallization and filler materials
    Liu, Canyu
    Liu, Changqing
    MANUFACTURING REVIEW, 2025, 12
  • [33] A high-temperature-resistant die attach material based on Cu@In@Ag particles for high-power devices
    Mao, Xingchao
    Liu, Jiahao
    Yu, Fuwen
    Fu, Xing
    Hang, Chunjin
    Chen, Hongtao
    Li, Mingyu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (08) : 5599 - 5612
  • [34] Silver Micropowders as SiC Die Attach Material for High Temperature Applications
    Kisiel, Ryszard
    Szczepanski, Zbigniew
    Firek, Piotr
    Grochowski, Jakub
    Mysliwiec, Marcin
    Guziewicz, Marek
    2012 35TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY (ISSE 2012): POWER ELECTRONICS, 2012, : 144 - 148
  • [35] A high-temperature-resistant die attach material based on Cu@In@Ag particles for high-power devices
    Xingchao Mao
    Jiahao Liu
    Fuwen Yu
    Xing Fu
    Chunjin Hang
    Hongtao Chen
    Mingyu Li
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 5599 - 5612
  • [36] High-temperature stability of SiC-based composites in high-water-vapor-pressure environments
    More, KL
    Tortorelli, PF
    Walker, LR
    Miriyala, N
    Price, JR
    van Roode, M
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2003, 86 (08) : 1272 - 1281
  • [37] High Temperature Die-attach Materials for Aerospace Power Electronics: Lifetime Tests and Modeling
    Hutzler, Aaron
    Tokarski, Adam
    Schletz, Andreas
    2015 IEEE AEROSPACE CONFERENCE, 2015,
  • [38] Development and Investigation of SiC and SiC-Based Devices
    Lebedev, Alexander A.
    CRYSTALS, 2020, 10 (12):
  • [39] SiC - a semiconductor for high-power, high-temperature and high-frequency devices
    Janzen, E.
    Kordina, O.
    Henry, A.
    Chen, W.M.
    Son, N.T.
    Monemar, B.
    Sorman, E.
    Bergman, P.
    Harris, C.I.
    Yakimova, R.
    Tuominen, M.
    Konstantinov, A.O.
    Hallin, C.
    Hemmingsson, C.
    Physica Scripta T, 1994, T54 : 283 - 290
  • [40] SIC - A SEMICONDUCTOR FOR HIGH-POWER, HIGH-TEMPERATURE AND HIGH-FREQUENCY DEVICES
    JANZEN, E
    KORDINA, O
    HENRY, A
    CHEN, WM
    SON, NT
    MONEMAR, B
    SORMAN, E
    BERGMAN, P
    HARRIS, CI
    YAKIMOVA, R
    TUOMINEN, M
    KONSTANTINOV, AO
    HALLIN, C
    HEMMINGSON, C
    PHYSICA SCRIPTA, 1994, 54 : 283 - 290