Hydrogen-surfactant mediated growth of Ge on Si(001)

被引：70
|
作者：
Kahng, SJ
Ha, YH
Park, JY
Kim, S
Moon, DW
Kuk, Y [1 ]
机构：
[1] Seoul Natl Univ, Ctr Sci Nanometer Scale, Seoul 151742, South Korea
[2] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[4] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305606, South Korea
[5] Korea Res Inst Stand & Sci, Surface Anal Grp, Taejon 305606, South Korea
来源：
PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.80.4931
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The role of hydrogen in the growth of Ge on a Si(001)-(2 X I) surface was studied by scanning tunneling microscopy and medium energy ion scattering spectroscopy. The adsorbed hydrogen was found to (i) increase the number of equilibrium adsorption sites, (ii) lift the diffusion anisotropy, and (iii) lower the diffusivity for Ge adatom, as suggested by the recent first principle calculation. With a dynamically supplied atomic hydrogen flux of similar to 2 monolayers/s, we achieved layer-by-layer growth by preventing growth of the hut cluster beyond the known critical thickness. The 10.0 monolayer Ge layers grown with hydrogen surfactant are strained, while those without it are relaxed.
引用
收藏
页码：4931 / 4934
页数：4
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