Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor -: art. no. 125314

被引：50
|
作者：
Schäpers, T
Nitta, J
Heersche, HB
Takayanagi, H
机构：
[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany
来源：
PHYSICAL REVIEW B | 2001年 / 64卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.64.125314
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An interference ferromagnet/semiconductor/ferromagnet transistor is proposed, where the relative conductance difference between parallel and antiparallel magnetization oscillates as a function of gate voltage. The characteristics of a one-dimensional as well as a two-dimensional structure are calculated and compared. In both cases the interferences result in an enhanced spin signal. It is shown that by using the spin filtering effect of an interface barrier the signal can be further increased.
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页数：5
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