The effects of TiO2 buffer layer on the properties of flexible ITO thin films

被引:0
|
作者
Xia Fan [1 ]
Yu Zhi-nong [1 ]
Li Yu-qiong [1 ]
Zhao Zhi-wei [1 ]
机构
[1] Beijing Inst Technol, Sch Informat Sci & Technol, Dept Opt Engn, Beijing 100081, Peoples R China
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With TiO2, buffer layer added, the properties of Indium-Tin Oxide (ITO) thin films deposited on PET substrates can be efficiently improved. The resistivity of the film reduced, visible transmittance increased and the mechanical property optimized.
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页数:3
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