Effects of SiO2 Buffer Layer on the Characteristics of Flexible ITO Films

被引：0

作者：

Yu Zhinong ^{[1
]}

Xiang Longfeng ^{[1
]}

Li Yuqiong ^{[1
]}

Xue Wei ^{[1
]}

机构：

[1] Beijing Inst Technol, Sch Informat Engn, Dept Opt Engn, Beijing 100081, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2009年 / 38卷 / 03期

关键词：

ion beam assisted deposition; ITO film; SiO2 buffer layer;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects Of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 x 10(-3) Omega.cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

引用

页码：443 / 446

页数：4

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