Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

被引：0
|
作者：
Kovchavtsev, A. P. [1 ]
Aksenov, M. S. [1 ,2 ]
Nastov'yak, A. E. [1 ]
Valisheva, N. A. [1 ]
Gorshkov, D. V. [1 ]
Sidorov, G. Yu. [1 ]
Dmitriev, D. V. [1 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2020年 / 46卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
In0; 52Al0; 48SAs; insulator; C-Vcharacteristic; density of interface states;
D O I：
10.1134/S1063785020050259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
TheC-Vcharacteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal-insulator-semiconductor structures have been studied. It has been established that the fragmentary measurement of theC-Vcharacteristics of InAlAs-based metal-insulator-semiconductor structures, in contrast standard registration method to at a constant voltage sweep rate, significantly weakens the effect of the hysteresis phenomena and allows one to record stationary curves. It is shown that the density of fast interface states calculated by the Terman method from such C-Vcharacteristics slightly changes over the InAlAs band gap and amounts to (3-6) x 10(11)and (1-3) x 10(11)eV(-1)cm(-2)for MIS structures with Al(2)O(3)and SiO2, respectively.
引用
收藏
页码：469 / 472
页数：4
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