Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

The authors present a semi-empirical model for the electron mobility in a MOSFET in the strong inversion region. The model includes the contribution of the coulomb, phonon and surface-roughness scattering, and reproduces experimental results with high accuracy in the 77-300 K temperature range. The authors analyse the influence of coulomb scattering on the different terms of the model after stressing the samples with successive Fowler-Nordheim tunnelling-injection series. In addition, it is shown that the terms a priori attributed to coulomb and phonon scattering receive the contribution of both mechanisms and thus cannot be separately attributed to each of them.