Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

被引：0
|
作者：
Banqueri, J
LopezVillanueva, J
Gamiz, F
Palma, A
Carceller, JE
机构：
[1] Dcpartamento de Electrônica y Tecnologia de Computadores, Facultad de Ciencias, Univcrsidad de Granada
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1996年 / 143卷 / 04期
关键词：
electron mobility; semi-empirical models; inversion regimes; MOSFETs;
D O I：
10.1049/ip-cds:19960337
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present a semi-empirical model for the electron mobility in a MOSFET in the strong inversion region. The model includes the contribution of the coulomb, phonon and surface-roughness scattering, and reproduces experimental results with high accuracy in the 77-300 K temperature range. The authors analyse the influence of coulomb scattering on the different terms of the model after stressing the samples with successive Fowler-Nordheim tunnelling-injection series. In addition, it is shown that the terms a priori attributed to coulomb and phonon scattering receive the contribution of both mechanisms and thus cannot be separately attributed to each of them.
引用
收藏
页码：202 / 206
页数：5
相关论文
共 50 条
  • [1] Semi-empirical quantum correction model for electron concentration in symmetric double gate MOSFETs
    Abdolkader, TM
    Fikry, W
    ICEEC'04: 2004 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONIC AND COMPUTER ENGINEERING, PROCEEDINGS, 2004, : 549 - 552
  • [2] A SEMI-EMPIRICAL MODEL FOR THE FIELD-EFFECT MOBILITY OF HYDROGENATED POLYCRYSTALLINE-SILICON MOSFETS
    SEKI, S
    KOGURE, O
    TSUJIYAMA, B
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 669 - 674
  • [3] A semi-empirical model for electron mobility at the SiC/SiO2 interface
    Saks, NS
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 233 - 238
  • [4] AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS
    CHUNG, SSS
    LIN, TS
    CHEN, YG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1691 - 1702
  • [5] A non-quasistatic semi-empirical model for small geometry MOSFETs
    Murray, D
    Sanchez, JJ
    Demassa, TA
    SOLID-STATE ELECTRONICS, 1997, 41 (09) : 1309 - 1319
  • [6] Combined Semi-empirical Model for Secondary Electron Yield of Metals
    Zhang Y.
    Yang J.
    Yang Z.
    Zhang N.
    Cui W.
    Gaodianya Jishu/High Voltage Engineering, 2023, 49 (09): : 3819 - 3826
  • [7] MOSFET ELECTRON INVERSION LAYER MOBILITIES - A PHYSICALLY BASED SEMI-EMPIRICAL MODEL FOR A WIDE TEMPERATURE-RANGE
    JEON, DS
    BURK, DE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (08) : 1456 - 1463
  • [8] SEMI-EMPIRICAL EQUATIONS FOR ELECTRON VELOCITY IN SILICON .2. MOS INVERSION LAYER
    SCHWARZ, SA
    RUSSEK, SE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1634 - 1639
  • [9] Semi-Empirical Relations for Pressure Distributions in Hypersonic Regime
    Fadgyas, M. C.
    Pricop, M. V.
    Niculescu, M. L.
    Cojocaru, M. G.
    Dumitrache, A.
    INTERNATIONAL CONFERENCE OF NUMERICAL ANALYSIS AND APPLIED MATHEMATICS (ICNAAM 2017), 2018, 1978
  • [10] FIELD-DEPENDENT ELECTRON-MOBILITY IN SILICON BETWEEN 8 AND 77 K - A SEMI-EMPIRICAL MODEL
    DELOSSANTOS, H
    GRAY, JL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) : 1972 - 1976
12345