Initial growth of MnAs on GaAs(001)-c(4 x 4) reconstructed surface

被引：6
|
作者：
Arai, Toshiaki [1 ]
Suzuki, Motoo [1 ]
Ueno, Yuriko [1 ]
Okabayashi, Jun [1 ]
Yoshino, Junji [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 40卷 / 02期
关键词：
MnAs; initial growth; scanning tunneling microscopy;
D O I：
10.1016/j.physe.2007.06.018
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the initial growth mechanism of MnAs on GaAs(001)-c(4 x 4)alpha reconstructed surfaces. We found that the MnAs deposition on GaAs(001)-c(4 x 4)alpha surface promotes to break the Ga-As asymmetric dimers and modulates the dimer characteristics to symmetric As-As dimer formation on the surfaces. The Ga atoms consisting of c(4 x 4)alpha reconstructed surface are contributed to the anomaly in the surface coverage during the MnAs growth. We also found that 1 ML zinc-blende-type layer is realized by the MnAs growth and then hexagonal NiAs-type MnAs islands are formed on the surface. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：332 / 334
页数：3
相关论文
共 50 条
  • [41] Surface reconstructions of MnAs grown on GaAs(001)
    Kästner, M
    Schippan, F
    Schützendübe, P
    Däweritz, L
    Ploog, KH
    SURFACE SCIENCE, 2000, 460 (1-3) : 144 - 152
  • [42] TILTING IN THE ARSENIC-INDUCED C(4X4) RECONSTRUCTION OF THE GAAS(001) SURFACE
    XU, C
    BURNHAM, JS
    BRAUN, RM
    GOSS, SH
    WINOGRAD, N
    PHYSICAL REVIEW B, 1995, 52 (07): : 5172 - 5178
  • [43] Tilt growth of MnAs on the GaAs(001) substrate
    Wan, Li
    Shangguan, Jinsi
    Luo, Haijun
    Huang, Yunmi
    Tong, Ning-Hua
    PHYSICS LETTERS A, 2007, 367 (4-5) : 373 - 378
  • [44] Extraordinary growth of C-60 on a GaAs(001) As-rich 2x4 surface
    Sakurai, T
    Xue, QK
    Hashizume, T
    Hasegawa, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1628 - 1632
  • [45] A reconstructed anatase (001)-1 x 4 surface and its reactivity
    Xu, Meiling
    Wang, Sheng
    Wang, Hui
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (25) : 16615 - 16620
  • [46] Adsorption of fullerenes Cn (n=32,36,40,44,48,60) on the GaAs(001)-c(4x4) reconstructed surface
    Zhou, Chenggang
    Wu, Jinping
    Han, Bo
    Yao, Shujuan
    Cheng, Hansong
    PHYSICAL REVIEW B, 2006, 73 (19)
  • [47] Optical properties of the GaAs(001)-c(4x4) surface:: direct analysis of the surface dielectric function
    Hogan, C
    Del Sole, R
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (15): : 3040 - 3046
  • [48] Chemisorption Of C28 fullerene on c(4X4) reconstructed GaAs(001) surface:: A density functional theory study -: art. no. 195316
    Yao, SJ
    Zhou, CG
    Ning, LC
    Wu, JP
    Pi, ZB
    Cheng, HS
    Jiang, YS
    PHYSICAL REVIEW B, 2005, 71 (19)
  • [49] Surface states at the GaAs(001)2x4 surface
    Arciprete, F
    Goletti, C
    Placidi, E
    Hogan, C
    Chiaradia, P
    Fanfoni, M
    Patella, F
    Balzarotti, A
    PHYSICAL REVIEW B, 2004, 69 (08):
  • [50] Structure transition between two GaAs(001)-c(4 x 4) surface reconstructions in AS4 flux
    Arai, T.
    Suzuki, M.
    Ueno, Y.
    Okabayashi, J.
    Yoshino, J.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 22 - 25
12345