Initial growth of MnAs on GaAs(001)-c(4 x 4) reconstructed surface

被引：6
|
作者：
Arai, Toshiaki [1 ]
Suzuki, Motoo [1 ]
Ueno, Yuriko [1 ]
Okabayashi, Jun [1 ]
Yoshino, Junji [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 40卷 / 02期
关键词：
MnAs; initial growth; scanning tunneling microscopy;
D O I：
10.1016/j.physe.2007.06.018
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the initial growth mechanism of MnAs on GaAs(001)-c(4 x 4)alpha reconstructed surfaces. We found that the MnAs deposition on GaAs(001)-c(4 x 4)alpha surface promotes to break the Ga-As asymmetric dimers and modulates the dimer characteristics to symmetric As-As dimer formation on the surfaces. The Ga atoms consisting of c(4 x 4)alpha reconstructed surface are contributed to the anomaly in the surface coverage during the MnAs growth. We also found that 1 ML zinc-blende-type layer is realized by the MnAs growth and then hexagonal NiAs-type MnAs islands are formed on the surface. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：332 / 334
页数：3
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