Reversibility of the island shape, volume and density in Stranski-Krastanow growth

被引：0

作者：

Ledentsov, NN ^{[1
]}

Shchukin, VA ^{[1
]}

Heitz, R ^{[1
]}

Bimberg, D ^{[1
]}

Ustinov, VM ^{[1
]}

Cherkashin, NA ^{[1
]}

Kovsh, AR ^{[1
]}

Musikhin, YG ^{[1
]}

Volovik, BV ^{[1
]}

Zhukov, AE ^{[1
]}

Cirlin, GE ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on reversible phenomena in size-limited Stranski-Krastanow growth of strained InAs islands on GaAs(001) surface. Plan view and cross-sectional transmission electron microscopy and photoluminescence spectroscopy reveal that, with increasing the substrate temperature, the average volume of the island decreases, and the island density decreases as well, while the lateral size of the islands increases and islands strongly flatten. If, after the formation of islands, the substrate temperature is reduced, the average volume and the density of the islands increase, while the lateral size of the island shrinks. These observations confirm the equilibrium nature of the array of islands.

引用

页码：375 / 376

页数：2

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