ELO bonding of GaAs devices on diamond film SAW devices

被引：0
|
作者：
Koh, K [1 ]
Takabatake, N [1 ]
Noge, S [1 ]
Kobayashi, T [1 ]
Arai, T [1 ]
Hohkawa, K [1 ]
机构：
[1] Kanagawa Inst Technol, Kanagawa, Japan
来源：
1998 IEEE ULTRASONICS SYMPOSIUM - PROCEEDINGS, VOLS 1 AND 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
This paper reports a basic study on the integration of diamond film with GaAs devices. We investigated roughness of diamond film surface by AFM and estimated thermal conductivity of diamond film by acoustic-optical measurement technology. We also bonded GaAs devices such as Schottky junction, MSM diode on the diamond film using improved epitaxial liftoff technology, in which polyimide film is used in place of black wax. These results confirm possibility of fabricating SAW-semiconductor functional devices on the diamond film.
引用
收藏
页码：327 / 330
页数：4
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