Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy

被引：0
|
作者：
Misiewicz, J [1 ]
Sitarek, P [1 ]
Sek, G [1 ]
Kudrawiec, R [1 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
MATERIALS SCIENCE-POLAND | 2003年 / 21卷 / 03期
关键词：
photoreflectance; electric field; low-dimensional structures; semiconductor devices;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this review, we present the photoreflectance (PR) spectroscopy as a powerful tool for investigations of bulk semiconductors and semiconductor heterostructures. We discuss the application of PR technique to investigation of various properties of semiconductors, including the composition of multinary compounds, distribution of the built-in electric field and the influence of perturbations such as temperature, strain, pressure; low-dimensional structures such as quantum wells, multiple quantum wells and superlattices, quantum dots; and the structures of semiconductor devices like transistors and vertical/planar light emitting laser structures.
引用
收藏
页码：263 / 320
页数：58
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