In situ Load-Pull MMIC for Large-Signal Characterization of mHEMT Devices at Submillimeter-Wave Frequencies

被引：0

作者：

John, Laurenz ^{[1
,2
]}

Ohlrogge, Matthias ^{[1
]}

Wagner, Sandrine ^{[1
]}

Friesicke, Christian ^{[1
]}

Tessmann, Axel ^{[1
]}

Leuther, Arnulf ^{[1
]}

Zwick, Thomas ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

[2] KIT, Inst Radio Frequency Engn & Elect IHE, Karlsruhe, Germany

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

关键词：

in situ load-pull; tunable matching network; mHEMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in situ load-pull MMIC with preamplifier and tunable output matching network in a 35nm InAlAs/InGaAs technology is presented in this paper. The load impedance tuning is realized using an open-circuit stub network with shunt-FETs. The tunable load impedance range and the large-signal characterization of a 2 x 15 mu m device is demonstrated at 300 GHz. With this MMIC the unique characterization and large-signal model validation of mHEMT devices at sub-mm wave frequencies is possible. The total chip area required for large-signal characterization of a single device is 1850 mu m x 400 mu m.

引用

页码：761 / 764

页数：4

共 36 条

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