In situ Load-Pull MMIC for Large-Signal Characterization of mHEMT Devices at Submillimeter-Wave Frequencies

被引：0
|
作者：
John, Laurenz [1 ,2 ]
Ohlrogge, Matthias [1 ]
Wagner, Sandrine [1 ]
Friesicke, Christian [1 ]
Tessmann, Axel [1 ]
Leuther, Arnulf [1 ]
Zwick, Thomas [2 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
[2] KIT, Inst Radio Frequency Engn & Elect IHE, Karlsruhe, Germany
来源：
2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年
关键词：
in situ load-pull; tunable matching network; mHEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An in situ load-pull MMIC with preamplifier and tunable output matching network in a 35nm InAlAs/InGaAs technology is presented in this paper. The load impedance tuning is realized using an open-circuit stub network with shunt-FETs. The tunable load impedance range and the large-signal characterization of a 2 x 15 mu m device is demonstrated at 300 GHz. With this MMIC the unique characterization and large-signal model validation of mHEMT devices at sub-mm wave frequencies is possible. The total chip area required for large-signal characterization of a single device is 1850 mu m x 400 mu m.
引用
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页码：761 / 764
页数：4
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