Spin-polarized tunneling in an electromagnetic structure

被引:5
|
作者
Seo, KC
Ihm, GH [1 ]
Lee, SJ
机构
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
关键词
spin-polarization; tunneling; magnetic barriers;
D O I
10.1016/j.mejo.2005.02.060
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have shown that highly spin-polarized electrons can be obtained through the resonant tunneling of electromagnetic structure, which consists of triple-magnetic barriers and correspondingly designed electrostatic potential distributions. The spin dependence of the tunneling comes from the Zeeman term and thus is expected to be better observed in materials with higher g* and m*. The huge difference between spin-up and spin-down electrons in the characteristics of transmission probability is found. The proposed structure is expected to be utilized as spin-switching device as well as spin-filtering device. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:484 / 487
页数:4
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